High Temperature Solution Growth on Free-standing (001) 3C-SiC Epilayers

Solution growth was performed using a free-standing (001) 3C-SiC epilayer as a seed crystal at a growth temperature of 1700 degrees C. The seed crystal was prepared by a CVD method on the undulated Si substrate. 3C-SiC stably grew on the (001) seed crystal. However, dark stripes front the seed crystal to the grown crystal along {111} planes were clearly observed. The stripes were due to the high-density stacking faults extended from the stacking faults in the 3C-SiC epilayer that were induced during the CVD growth on Si Substrate.