Intrinsic reaction and self-diffusion kinetics for silicon carbide synthesis by rapid carbothermal reduction

被引:15
|
作者
Johnson, JA [1 ]
Hrenya, CM [1 ]
Weimer, AW [1 ]
机构
[1] Univ Colorado, Dept Chem Engn, Boulder, CO 80309 USA
关键词
D O I
10.1111/j.1151-2916.2002.tb00447.x
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A one-dimensional nonisothermal model has been developed for the "rapid carbothermal reduction" synthesis of fine silicon carbide powders. Intrinsic reaction and self-diffusion kinetics are identified through simulation of the model and comparison to experimental results. The reaction rate follows a shrinking-core mechanism and is described by the relation k(s-1) = (2.8)/d(p)(o) exp((-3.4 x 105)/(RTm)) The self-diffusion coefficient for SiC in the aerosol flow reactor is described by the relation D*(m(2)/s) = 1.4 x 10(-5) exp ((-4.46 x 105)/(RTm)).
引用
收藏
页码:2273 / 2280
页数:8
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