Electronic and optical properties of Ge-doped silica optical fiber

被引：2

作者：

Guan, Xiaoning ^{[1
,2
,3
]}

Zhang, Ru ^{[1
,3
,4
]}

Jia, Baonan ^{[1
]}

Chen, Xi ^{[1
,4
]}

Yan, Binbin ^{[1
]}

Peng, Gang-Ding ^{[5
]}

Li, Shanjun ^{[6
]}

Lu, Pengfei ^{[1
]}

机构：

[1] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

[2] Beijing Univ Posts & Telecommun, Sch Sci, Beijing 100876, Peoples R China

[3] Beijing Univ Posts & Telecommun, Beijing Key Lab Space Ground Interconnect & Conve, Xitucheng Rd 10, Beijing 100876, Peoples R China

[4] Beijing Univ Posts & Telecommun, Sch Ethn Minor Educ, Beijing 100876, Peoples R China

[5] Univ New South Wales, Sch Elect Engn & Telecommun, Sydney, NSW 2052, Australia

[6] Sichuan Univ, Coll Elect Engn & Informat Technol, Chengdu 610065, Sichuan, Peoples R China

来源：

MODERN PHYSICS LETTERS B | 2019年 / 33卷 / 12期

基金：

中国国家自然科学基金;

关键词：

First-principle; Ge-doped silica; Si-Ge-Si defect; membered ring; absorption peak; RING STRUCTURES; CENTERS; GLASSES; DEFECT; SIO2; IRRADIATION; BAND; LUMINESCENCE; MECHANISMS; DISPERSION;

D O I：

10.1142/S0217984919501501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electronic and optical properties of Germanium-doped (Ge-doped) silica optical fiber are investigated by employing first-principle methods. The substitution of a Ge atom with a Silicon (Si) atom or an Oxygen (O) atom in different "Si-O-Si" membered rings is analyzed. Compared with the experimental data observed at around 5 eV, our calculated results reveal that the characteristic absorption peak at 5.12 eV may be caused by Si-Ge-Si defect in 5-membered ring (5MR). Our study of Ge-doped approach in different ring structures will be useful in the application of Ge-doped optical fiber sensing.

引用

页数：11

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