InAs Quantum-dot Intersubband Optical Amplifier

被引：0
|
作者：
Lu, Xuejun [1 ]
机构：
[1] Univ Massachusetts Lowell, Dept Elect & Comp Engn, Lowell, MA 01854 USA
来源：
INFRARED SYSTEMS AND PHOTOELECTRONIC TECHNOLOGY III | 2008年 / 7055卷
关键词：
D O I：
10.1117/12.796706
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A coupled quantum dot intersubband optical amplifier structure is reported. InGaAsP/GaAs supperlattice is used to effectively generate population inversion between the excited states and the ground state of the QD. Due to the three-dimensional quantum confinement, normal incidence optical amplification with low threshold current density can be expected. Such an intersubband optical amplifier is promising for highly-sensitive middle infrared (MWIR) and longwave infrared sensing and imaging.
引用
收藏
页数：7
相关论文
共 50 条
  • [31] Polarization-insensitive quantum-dot coupled quantum-well semiconductor optical amplifier
    Huang, Lirong
    Yu, Yi
    Tian, Peng
    Huang, Dexiu
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (01)
  • [32] Improvement of InAs quantum-dot optical properties by strain compensation with GaNAs capping layers
    Zhang, XQ
    Ganapathy, S
    Suemune, I
    Kumano, H
    Uesugi, K
    Nabetani, Y
    Matsumoto, T
    APPLIED PHYSICS LETTERS, 2003, 83 (22) : 4524 - 4526
  • [33] State filling in InAs quantum-dot laser structures
    Osborne, S
    Blood, P
    Smowton, P
    Lutti, J
    Xin, YC
    Stintz, A
    Huffaker, D
    Lester, LF
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2004, 40 (12) : 1639 - 1645
  • [34] Optical investigation of the interdot carrier transfer process in InAs/GaAs quantum-dot heterosystems
    Nee, TE
    Wang, JC
    Shen, HT
    Cheng, CC
    Lin, RM
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2006, 24 (01): : 34 - 37
  • [35] On three dimensional self-organization and optical properties of InAs quantum-dot multilayers
    González, JC
    Matinaga, FM
    Rodrigues, WN
    Moreira, MVB
    de Oliveira, AG
    da Silva, MIN
    Vilela, JMC
    Andrade, MS
    Ugarte, D
    Silva, PC
    APPLIED PHYSICS LETTERS, 2000, 76 (23) : 3400 - 3402
  • [36] Study of lateral-carrier transport in InAs quantum-dot heterostructures by optical spectroscopy
    Lin, RM
    Cheng, CC
    Shen, HT
    Nee, TE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (03): : 891 - 893
  • [37] Optical bistability in a two-section InAs quantum-dot laser附视频
    姜立稳
    叶小玲
    周晓龙
    金鹏
    吕雪芹
    王占国
    半导体学报, 2010, (11) : 55 - 57
  • [38] Optical Degradation of InAs Quantum-Dot lasers on Silicon: Dependence on Temperature and on Diffusion Processes
    Buffolo, Matteo
    Zenari, Michele
    De Santi, Carlo
    Norman, Justin
    Bowers, John E.
    Herrick, R. W.
    Meneghesso, Gaudenzio
    Zanoni, Enrico
    Meneghini, Matteo
    NOVEL IN-PLANE SEMICONDUCTOR LASERS XXI, 2022, 12021
  • [39] Giant optical anisotropy in a single InAs quantum dot in a very dilute quantum-dot ensemble -: art. no. 041904
    Favero, I
    Cassabois, G
    Jankovic, A
    Ferreira, R
    Darson, D
    Voisin, C
    Delalande, C
    Roussignol, P
    Badolato, A
    Petroff, PM
    Gérard, JM
    APPLIED PHYSICS LETTERS, 2005, 86 (04) : 041904 - 1
  • [40] Intersubband optical transitions in InAs/GaSb quantum wells
    Semenikhina I.A.
    Zakharova A.A.
    Chao K.A.
    Russian Microelectronics, 2010, 39 (01) : 63 - 72
12345