InAs Quantum-dot Intersubband Optical Amplifier

被引：0
|
作者：
Lu, Xuejun [1 ]
机构：
[1] Univ Massachusetts Lowell, Dept Elect & Comp Engn, Lowell, MA 01854 USA
来源：
INFRARED SYSTEMS AND PHOTOELECTRONIC TECHNOLOGY III | 2008年 / 7055卷
关键词：
D O I：
10.1117/12.796706
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A coupled quantum dot intersubband optical amplifier structure is reported. InGaAsP/GaAs supperlattice is used to effectively generate population inversion between the excited states and the ground state of the QD. Due to the three-dimensional quantum confinement, normal incidence optical amplification with low threshold current density can be expected. Such an intersubband optical amplifier is promising for highly-sensitive middle infrared (MWIR) and longwave infrared sensing and imaging.
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页数：7
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