Studies of electronic sputtering of fullerene under swift heavy ion impact

被引：14

作者：

Ghosh, S

Avasthi, DK ^{[1
]}

Tripathi, A

Srivastava, SK

Rao, SVSN

Som, T

Mittal, VK

Grüner, F

Assmann, W

机构：

[1] Aruna Asaf Ali Marg, Ctr Nucl Sci, New Delhi 110067, India

[2] Univ Hyderabad, Sch Phys, Hyderabad 500046, Andhra Pradesh, India

[3] Punjabi Univ, Dept Phys, Patiala 147002, Punjab, India

[4] Univ Munich, Sekt Phys, D-84784 Garching, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2002年 / 190卷

关键词：

swift heavy ion; electronic sputtering; fullerene; elastic recoil detection analysis; electron-phonon coupling;

D O I：

10.1016/S0168-583X(02)00474-3

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The present work reports the dependence of electronic sputtering on thickness of fullerene film. The energetic ions of 200 MeV An(15+) are taken from NSC Pelletron at New Delhi and the Tandem accelerator at Munich. On-line elastic recoil detection analysis (ERDA) with DeltaE-E telescope detector is used to determine the electronic sputtering yield. We observed systematic decrease in sputtering yield of carbon with increase in film (C-60/silicon) thickness. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：169 / 172

页数：4

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