Spontaneous formation of a polariton condensate in a planar GaAs microcavity

被引：90

作者：

Wertz, Esther ^{[1
]}

Ferrier, Lydie ^{[1
]}

Solnyshkov, Dmitry D. ^{[2
]}

Senellart, Pascale ^{[1
]}

Bajoni, Daniele ^{[1
]}

Miard, Audrey ^{[1
]}

Lemaitre, Aristide ^{[1
]}

Malpuech, Guillaume ^{[2
]}

Bloch, Jacqueline ^{[1
]}

机构：

[1] CNRS, LPN, F-91460 Marcoussis, France

[2] Univ Clermont Ferrand, CNRS, LASMEA, F-63177 Aubiere, France

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 05期

关键词：

Boltzmann equation; gallium arsenide; III-V semiconductors; microcavities; numerical analysis; photoluminescence; polaritons; BOSE-EINSTEIN CONDENSATION; SEMICONDUCTOR MICROCAVITY; EXCITON POLARITONS; ROOM-TEMPERATURE; LASERS;

D O I：

10.1063/1.3192408

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on polariton condensation in a planar GaAs microcavity under nonresonant optical excitation. Angularly resolved photoluminescence measurements demonstrate polariton condensation for temperature up to 40 K. Numerical simulations using Boltzmann equations give an overall description of the observed condensation for various detunings and temperatures. This model highlights the importance of the polariton relaxation rate as compared to the polariton decay for condensation to occur on the lowest energy polariton states.

引用

页数：3

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