Determination of band alignment in two-dimensional h-BN/WS2 van der waals heterojunction by X-ray photoelectron spectroscopy

被引：10
|
作者：
Xing, Shu'an [1 ]
Zhao, Guijuan [1 ]
Xu, Yan [1 ]
Wang, Jie [1 ]
Li, Xunshuan [1 ,2 ]
Yang, Wenge [1 ]
Liu, Guipeng [1 ,2 ]
Yang, Jianhong [1 ]
机构：
[1] Lanzhou Univ, Sch Phys Sci & Technol, Lanzhou 730000, Gansu, Peoples R China
[2] Lanzhou Univ, Key Lab Magnetism & Magnet Mat, Minist Educ, Lanzhou 730000, Gansu, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2021年 / 854卷
基金：
中国国家自然科学基金;
关键词：
Hexagonal boron nitride; Tungsten disulfide; Band alignment; van der waals heterojunction; X-ray photoelectron spectroscopy; HEXAGONAL BORON-NITRIDE; SPECTRA; OFFSETS; GROWTH; BN;
D O I：
10.1016/j.jallcom.2020.157301
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We have fabricated two-dimensional h-BN/WS2 van der Waals heterojunctions by stacking h-BN and WS2 monolayers, and experimentally measured the valence band offset (VBO) of h-BN/WS2 heterojunction by X-ray photoelectron spectroscopy (XPS). The h-BN and WS2 monolayers band gaps and the measured value of VBO were used to determine the conduction band offset (CBO). The measurement results of VBO and CBO are 3.39 +/- 0.15 eV and 0.57 +/- 0.15 eV, respectively, revealing a type-I band alignment. It is urgent to measure the band alignment parameters of h-BN/WS2 heterojunctions for analyzing and designing h-BN/WS2 based devices. (C) 2020 Elsevier B.V. All rights reserved.
引用
收藏
页数：6
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