Study of the mechanical stress impact on silicide contact resistance by 4-point bending

被引：1

作者：

Liu, Yefan ^{[1
,2
]}

Yu, Hao ^{[1
]}

Hiblot, Gaspard ^{[1
]}

Kruv, Anastasiia ^{[1
,2
]}

Schaekers, Marc ^{[1
]}

Horiguchi, Naoto ^{[1
]}

Velenis, Dimitrios ^{[1
]}

De Wolf, Ingrid ^{[1
,2
]}

机构：

[1] IMEC, Kapeldreef 75, Leuven, Belgium

[2] Katholieke Univ Leuven, Dept Mat Engn, Kasteelpk Arenberg 44, Leuven, Belgium

来源：

2019 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2019年

关键词：

4-point bending; silicide contact resistance; mechanical stress; circular transmission line model;

D O I：

10.1109/irps.2019.8720416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, externally applied mechanical stress impact on silicide contact resistance is studied by in-situ probing in four-point bending (4pb) of a circular transmission line model (CTLM) test structure. Much less stress impact on silicide contact resistance is found compared to the stress impact on n-Si mobility. Stress impact on two silicide contacts (Ti/n-Si and La/n-Si) is studied and different behavior is observed due to the Schottky barrier difference. To explain the phenomenon, a TCAD model of CTLM is implemented and compared with the silicide diode measurement. The shifts of band energy level contribute to the change of Schottky barrier height and hence induce the contact resistance variation.

引用

页数：5

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