Fabrication of micro/nano-structures using focused ion beam implantation and XeF2 gas-assisted etching

被引:29
|
作者
Xu, Z. W. [1 ,2 ]
Fang, F. Z. [1 ,2 ]
Fu, Y. Q. [3 ]
Zhang, S. J. [1 ]
Han, T. [1 ]
Li, J. M. [2 ]
机构
[1] Tianjin Univ, Ctr MicroNano Mfg Technol, State Key Lab Precis Measuring Technol & Instrume, Tianjin, Peoples R China
[2] Tianjin MicroNano Mfg Tech Co Ltd, Tianjin, Peoples R China
[3] Univ Elect Sci & Technol China, Sch Phys Elect, Chengdu, Peoples R China
关键词
D O I
10.1088/0960-1317/19/5/054003
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A micro/nano-structure fabrication method is developed using focused ion beam implantation (FIBI) and FIB XeF2 gas-assisted etching (FIB-GAE). Firstly, the FIB parameters' influence on the FIBI depth is studied by SEM observation of the FIBI cross-section cutting by FIB. Nanoparticles with 10-15 nm diameter are found to be evenly distributed in the FIBI layer, which can serve as a XeF2-assisted etching mask when the ion dose is larger than 1.4 x 10(17) ions cm(-2). The FIBI layers being used as the etching mask for the subsequent FIB-GAE process are explored to create different micro/nano-structures such as nano-gratings, nano-electrode and sinusoidal microstructures. It is found that the method of combining FIBI with subsequent FIB-GAE is efficient and flexible in micro/nano-structuring, and it can effectively remove the redeposition effect compared with the FIB milling method.
引用
收藏
页数:9
相关论文
共 50 条
  • [21] Gas-assisted focused ion beam etching of indium-tin oxide film
    Lee, Ming-Kwei
    Kuo, Kwei-Kuan
    Japanese Journal of Applied Physics, 2008, 47 (01): : 347 - 350
  • [22] Interdigitated 50 nm Ti electrode arrays fabricated using XeF2 enhanced focused ion beam etching
    Santschi, Ch
    Jenke, M.
    Hoffmann, P.
    Brugger, J.
    NANOTECHNOLOGY, 2006, 17 (11) : 2722 - 2729
  • [23] Effect of Refresh Time on XeF2 Gas-assisted FIB Milling of GaAs
    Sun, Jining
    Zhang, Lei
    Zhang, Yi
    Han, Yunlong
    Zhang, Lei
    NANOMANUFACTURING AND METROLOGY, 2023, 6 (01)
  • [24] Fabrication of Step-and-Flash Imprint Lithography (S-FIL) templates using XeF2 enhanced focused ion-beam etching
    Kettle, J.
    Hoyle, R. T.
    Dimov, S.
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 96 (04): : 819 - 825
  • [25] Fabrication of Step-and-Flash Imprint Lithography (S-FIL) templates using XeF2 enhanced focused ion-beam etching
    J. Kettle
    R. T. Hoyle
    S. Dimov
    Applied Physics A, 2009, 96 : 819 - 825
  • [26] FOCUSED ION-BEAM ASSISTED ETCHING OF QUARTZ IN XEF2 WITHOUT TRANSMITTANCE REDUCTION FOR PHASE-SHIFTING MASK REPAIR
    NAKAMURA, H
    KOMANO, H
    OGASAWARA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (12B): : 4465 - 4467
  • [27] Computational modelling and optimisation of the fabrication of nano-structures using focused ion beam and imprint forming technologies
    Stoyanov, S.
    Bailey, C.
    Tang, Y. K.
    Marson, S.
    Dyer, A.
    Allen, D.
    Desmulliez, M.
    16 ISCMP: PROGRESS IN SOLID STATE AND MOLECULAR ELECTRONICS, IONICS AND PHOTONICS, 2010, 253
  • [28] Fabrication of Si microstructures using focused ion beam implantation and reactive ion etching
    Qian, H. X.
    Zhou, Wei
    Miao, Jianmin
    Lim, Lennie E. N.
    Zeng, X. R.
    JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2008, 18 (03)
  • [29] Fabrication of micro- and nano-structures for antireflection by chemical etching method
    Rong, C.
    Gu, X. -Y.
    Liu, W. -P.
    Zhang, W.
    Zhang, F.
    Yuan, L.
    Wang, Y. Y.
    Peng, C. S.
    2013 INTERNATIONAL CONFERENCE ON MANIPULATION, MANUFACTURING AND MEASUREMENT ON THE NANOSCALE (3M-NANO), 2013, : 368 - 371
  • [30] Fabrication and properties of PZT micro cantilevers using isotropic silicon dry etching process by XeF2 gas for release process
    Park, JS
    Park, HD
    Kang, SG
    SENSORS AND ACTUATORS A-PHYSICAL, 2005, 117 (01) : 1 - 7