Fabrication of micro/nano-structures using focused ion beam implantation and XeF2 gas-assisted etching

被引:29
|
作者
Xu, Z. W. [1 ,2 ]
Fang, F. Z. [1 ,2 ]
Fu, Y. Q. [3 ]
Zhang, S. J. [1 ]
Han, T. [1 ]
Li, J. M. [2 ]
机构
[1] Tianjin Univ, Ctr MicroNano Mfg Technol, State Key Lab Precis Measuring Technol & Instrume, Tianjin, Peoples R China
[2] Tianjin MicroNano Mfg Tech Co Ltd, Tianjin, Peoples R China
[3] Univ Elect Sci & Technol China, Sch Phys Elect, Chengdu, Peoples R China
关键词
D O I
10.1088/0960-1317/19/5/054003
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A micro/nano-structure fabrication method is developed using focused ion beam implantation (FIBI) and FIB XeF2 gas-assisted etching (FIB-GAE). Firstly, the FIB parameters' influence on the FIBI depth is studied by SEM observation of the FIBI cross-section cutting by FIB. Nanoparticles with 10-15 nm diameter are found to be evenly distributed in the FIBI layer, which can serve as a XeF2-assisted etching mask when the ion dose is larger than 1.4 x 10(17) ions cm(-2). The FIBI layers being used as the etching mask for the subsequent FIB-GAE process are explored to create different micro/nano-structures such as nano-gratings, nano-electrode and sinusoidal microstructures. It is found that the method of combining FIBI with subsequent FIB-GAE is efficient and flexible in micro/nano-structuring, and it can effectively remove the redeposition effect compared with the FIB milling method.
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页数:9
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