Novel in-situ focus monitor technology in attenuated phase shift mask under actual illumination conditions

被引:0
|
作者
Izuha, K [1 ]
Asano, M [1 ]
Fujisawa, T [1 ]
Inoue, S [1 ]
机构
[1] Toshiba Co Ltd, Semicond Co, Proc & Mfg Engn, Ctr,Isogo Ku, Yokohama, Kanagawa 2358522, Japan
关键词
focus; effective; in-situ monitor; phase shift;
D O I
10.1117/1.1669541
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Focus monitor technology for attenuated phase shift masks under annular illumination has been developed for a in-line quality control. The focus monitor pattern on a reticle employs a pair of grouped lozenge-shaped opening patterns in the attenuated phase shifting region. Since the phase shifting angles of light passing through the first and second opening pat-terns are 90degrees and 0degrees, respectively, the best focus position for the first pattern shifts to that of the second pattern. Subtraction of the length of the patterns is a linear function of the actual focal position printed on the wafer. The linear function is insensitive to further mask phase error. Therefore, the effective focal position can be extracted by measuring that subtracted from the measured length. High resolution of 10 nm defocus was achieved using this technique. (C) 2004 Society of Photo-Optical Instrumentation Engineers.
引用
收藏
页码:284 / 292
页数:9
相关论文
共 30 条
  • [1] Novel in-situ focus monitor technology in attenuated PSM under actual illumination condition
    Izuha, K
    Asano, M
    Fujisawa, T
    Inoue, S
    OPTICAL MICROLITHOGRAPHY XVI, PTS 1-3, 2003, 5040 : 590 - 599
  • [2] Implementation of phase shift focus monitor under modified illumination
    Nakao, S
    Miyamoto, Y
    Maejima, S
    Ueno, A
    Yamashita, S
    Miyazaki, J
    Tokui, A
    Tsujita, K
    Arimoto, I
    MICROPROCESSES AND NANOTECHNOLOGY 2001, DIGEST OF PAPERS, 2001, : 10 - 11
  • [3] Implementation of phase shift focus monitor with modified illumination
    Nakao, S
    Maejima, S
    Ueno, A
    Yamashita, S
    Miyazaki, J
    Tokui, A
    Tsujita, K
    Arimoto, I
    OPTICAL MICROLITHOGRAPHY XV, PTS 1 AND 2, 2002, 4691 : 918 - 926
  • [4] Impact of transmission error for attenuated phase shift mask for 0.10 um technology
    Tan, SK
    Lin, QY
    Quan, CG
    Tay, CJ
    OPTICAL MICROLITHOGRAPHY XV, PTS 1 AND 2, 2002, 4691 : 1062 - 1069
  • [5] Differential reflection phase shift under conditions of attenuated internal reflection
    Azzam, RMA
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA A-OPTICS IMAGE SCIENCE AND VISION, 1999, 16 (07): : 1700 - 1702
  • [6] Integration of attenuated phase shift mask to 0.13μm technology contact level masking process
    Choo, LC
    Park, O
    Sack, MJ
    Tam, SC
    OPTICAL MICROLITHOGRAPHY XIII, PTS 1 AND 2, 2000, 4000 : 1193 - 1202
  • [7] Shape engineering: A novel optical proximity correction technique for attenuated phase-shift mask
    Pau, S
    Bolan, K
    Blakey, M
    Nalamasu, O
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (06): : 2896 - 2899
  • [8] Focus drilling and attenuated phase shift mask for subwavelength contact window printing using positive and negative resists
    Pau, S
    Trimble, LE
    Blatchford, JW
    Watson, GP
    Frackoviak, J
    Cirelli, R
    Nalamasu, O
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06): : 2499 - 2506
  • [9] Sub-120nm technology compatibility of attenuated phase shift mask in KrF and ArF lithography
    Ham, YM
    Kim, SM
    Kim, SJ
    Bae, SM
    Kim, YD
    Baik, KH
    20TH ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, 2000, 4186 : 359 - 371
  • [10] MEF studies for attenuated phase shift mask for sub 0.13 um technology using 248nm
    Tan, SK
    Lin, QY
    Chua, GS
    Quan, CG
    Tay, CJ
    OPTICAL MICROLITHOGRAPHY XV, PTS 1 AND 2, 2002, 4691 : 1366 - 1372