A potential degradation mechanism in RF MEMS ohmic switches

被引：1

作者：

Huang, Qinwen ^{[1
]}

Dong, Xianshan ^{[1
]}

Zhu, Junhua ^{[1
]}

Yang, Shaohua ^{[1
]}

Wang, Yunhui ^{[1
]}

机构：

[1] Minist Ind & Informat Technol, Elect Res Inst 5, Natl Key Lab Sci & Technol Reliabil Phys & Applic, Guangzhou 510610, Guangdong, Peoples R China

来源：

INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2019年 / 33卷 / 14期

基金：

中国国家自然科学基金;

关键词：

Electrical breakdown; RF MEMS; degradation mechanism; ELECTRIC-FIELD BREAKDOWN; DEVICES; AIR;

D O I：

10.1142/S0217979219501352

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A study of electrical breakdown across bias and top electrodes and its effect on the reliability of RF MEMS ohmic switches is presented. Tests under two situations were applied to study the electrical breakdown characteristic between bias and top electrodes, the first is the 10 h continuous stress under on state and the second is the voltage sweep from 0 V to 80 V. During the test, the switch ohmic contact resistance and current across bias and top electrodes were monitored simultaneously. Current across bias and top electrodes is observed in both of the two situations. Further analysis by FIB and SEM shows the breakdown damage on the surface of the bias electrode, which leads to the pull-in voltage shift of the RF MEMS ohmic switches.

引用

页数：8

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