Interdigitated low-loss ohmic RF-MEMS switches

被引：0
|
作者：
Gaddi, R [1 ]
Bellei, M [1 ]
Gnudi, A [1 ]
Margesin, B [1 ]
Ciacomozzi, F [1 ]
机构：
[1] Univ Bologna, Ctr Ric Ercole De Castro, I-40125 Bologna, Italy
来源：
NSTI NANOTECH 2004, VOL 2, TECHNICAL PROCEEDINGS | 2004年
关键词：
rf-mems; switch; ohmic; low-loss; model;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An interdigitated design for MEMS RF-switches is applied to both a shunt and a series ohmic contact configuration. Interdigitated Al-Ti-TiN RF-signal paths and poly actuation electrodes are arranged underneath an electrodeposited gold plate, suspended by four thinner gold beam springs. Ohmic contact occurs at pull-in between the gold plate and the RF-signal elecrodes only. Measurements show insertion loss better than 0.8 dB and isolation better than 20 dB up to 13 GHz. Extracted lumped element equivalent circuits show intrinsic contact resistances of 1.6 Omega in the shunt and 4.5 Omega in the series switch. The interdigitated topology of RF-signal and actuation electrodes results in uniform contact pressure distribution and consistently low contact resistance.
引用
收藏
页码：327 / 330
页数：4
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