Study on the ZnO-based ceramic films for low-voltage varistors with high stability

被引：5
|
作者：
Jiang, S. L. [1 ]
Xie, T. T. [1 ]
Zhang, H. B. [1 ]
Guo, T. [1 ]
Huang, Y. Q. [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China
来源：
JOURNAL OF ELECTROCERAMICS | 2008年 / 21卷 / 1-4期
关键词：
ZnO; Varistors; Stability; B2O3;
D O I：
10.1007/s10832-007-9234-z
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
ZnO-based ceramic films for low-voltage varistors were fabricated by a novel sol-gel process. The stability of ZnO-based ceramic films has been studied by improving the degradation properties and increasing the microstructure compactness of the films. The degradation of the film varistors was improved via doping with Na+ and heat-treating in oxygen ambient. The microstructure compactness was increased via eliminating the microspores and improving uniformity of the grain size of ZnO by doping with B2O3. The results indicated that ZnO-based ceramic films for low-voltage varistors with high stability can be obtained while the concentration of doped Na+ is 20-40 ppm, B2O3 is 0.25-0.5 mol.% and being heat-treated in oxygen ambient for 2 h.
引用
收藏
页码：528 / 531
页数：4
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