Preparation and characterization of layered low-voltage ZnO varistors

被引：1

作者：

Wang Lihui ^{[1
]}

Gan Guoyou ^{[1
]}

Sun Jialin ^{[2
]}

Yan Jikang ^{[1
]}

机构：

[1] Kunming Univ Sci & Technol, Fac Mat & Met Engn, Kunming 650093, Yunnan, Peoples R China

[2] China Nonferrous Met Min Grp Co Ltd, Beijing 100055, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2009年 / 30卷 / 03期

关键词：

layered ZnO varistor; non-linearity; electrical properties;

D O I：

10.1088/1674-4926/30/3/033002

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Double-layered, low-voltage ZnO varistors have been fabricated by feeding two kinds of ZnO powders into a die using dry extrusion molding. Compared with ZnO varistors fabricated by the conventional route, the layered ZnO varistors have larger non-linear coefficients, lower breakdown electric fields, and lower leakage current densities. The improvement in electrical performance of the layered low-voltage ZnO varistors is attributed to the asymmetric band structure at grain boundary between the two layers.

引用

页数：4

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