Computational challenges in nanoscale device modeling

被引:0
|
作者
Polizzi, E [1 ]
Sameh, A [1 ]
Sun, H [1 ]
机构
[1] Purdue Univ, Dept Comp Sci, W Lafayette, IN 47907 USA
关键词
nanoscale devices; Green's function; NEGF-poisson; parallel numerical algorithms; linear systems; generalized eigenvalue problems;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The development of new simulation tools is critical for the exploration of quantum transport in nanoscale devices. Such simulation is commonly performed by solving self-consistently the transport problem using the Non-Equilibrium Green's Functions (NEGF) formalism and the Poisson's equation to account for the space charge e ects. The quest for ever higher levels of detail and realism in such simulations as the modeling of multidimensional devices with detailed band structure calculations with(or without) the inclusion of scattering e ects, requires huge computational e ort. Hence, the need for an active research e ort in developing novel numerical techniques and parallel algorithms that axe ideally suited for high-end computing platforms. In this article, we will identify the identify the challenging numerical problems which arise from the NEGF/Poisson procedure and we will present new efficient parallel schemes for computing the problem.
引用
收藏
页码:403 / 406
页数:4
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