STATIC AND DYNAMIC STUDY IN HIGH-VOLTAGE 4H-SiC PiN RECTIFIERS

被引：0

作者：

Deng, Xiaochuan ^{[1
,2
]}

Chen, Xixi ^{[1
,2
]}

XuanLi ^{[1
,2
]}

Li, Chengzhan ^{[3
]}

Wu, Jia ^{[3
]}

Zhang, Yourun ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

[2] UESTC, Inst Elect & Informat Engn Dongguan, Dongguan 523808, Peoples R China

[3] Zhuzhou CRRC Times Elect Co Ltd, Semicond Business Unit, Zhuzhou 412001, Peoples R China

来源：

2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) | 2016年

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Designing and fabrication of 4kV, 20A 4H-SiC PiN diodes with JTE junction termination structure have been investigated in this paper. A bevel mesa structure and a single-zone junction termination extension (JTE) have been employed to achieve the target voltage. Finally, an optimized mesa structure without sub-trench (mesa height of 2.2 mu m and mesa angle of 20 degrees) has been experimentally demonstrated. A forward voltage drop of 3.5 V at 100 A/cm(2) are obtained from the fabricated diodes. Furthermore, capacitance and reverse recovery switching performance are presented. The value of capacitance under 800V reverse voltage is about 48pF. Subsequently, the reverse recovery of the fabricated PiN rectifiers at different forward current and different switching rates is demonstrated.

引用

页码：1047 / 1049

页数：3

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