8GHz, 1V, high linearity, low power CMOS active mixer

被引:10
|
作者
Mahmoudi, F [1 ]
Salama, CAT [1 ]
机构
[1] Univ Toronto, Edward S Rogers Sr Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada
关键词
D O I
10.1109/RFIC.2004.1320635
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the design and implementation of a new 8-GHz high linearity current commutating CMOS RF mixer. The high linearity of the mixer is attributed to the novel RF transconductor stage, employing a new version of the bias-offset technique. The outstanding features of the mixer are high linearity, low voltage, low power consumption and design simplicity. A prototype implemented in 0.18 mum CMOS technology and operating at 1V power supply features an IIP3 of +3.5 dBm, an IIP2 of better than +45 dBm, an input compression point of -5.5 dBm, a power conversion gain of +6.5 dB while drawing 6.9 mA. The performance of the present mixer exceeds that of previously reported active mixers while preserving simplicity of design and satisfying potential requirements for 4G mobile communication systems.
引用
收藏
页码:401 / 404
页数:4
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