Microstructure of thick AlN grown on sapphire by high-temperature MOVPE

被引：51
|
作者：
Imura, M.
Nakano, K.
Kitano, T.
Fujimoto, N.
Okada, N.
Balakrishnan, K.
Iwaya, M.
Kamiyama, S.
Amano, H.
Akasaki, I.
Shimono, K.
Noro, T.
Takagi, T.
Bandoh, A.
机构：
[1] Meijo Univ, Fac Sci & Technol, COE Program Century 21, Tempaku Ku, Nagoya, Aichi 4688502, Japan
[2] Ibiden Co Ltd, Ceram Operat, Gifu 5038503, Japan
[3] Showa Denko Co Ltd, Corp R&D Ctr, Midori Ku, Chiba 2760056, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2006年 / 203卷 / 07期
关键词：
D O I：
10.1002/pssa.200565401
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Thick AlN layers with atomically flat surfaces were successfully grown directly on sapphire substrates by metal-organic vapor phase epitaxy at high temperatures between 1300 degrees C and 1600 degrees C. Dislocations such as those of the edge, screw and mixed types exhibited different behaviors in the AlN epilayers. The dislocation density of AlN was less than 2 x 10(9) cm(-2). Free and bound excitons of AlN were observed with peak energies of 6.084 eV and 6.063 eV, respectively. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：1626 / 1631
页数：6
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