Effect of substrate temperature on polycrystalline Cd0.9Zn0.1Te thin films studied by Raman scattering spectroscopy

被引:16
|
作者
Sridharan, M [1 ]
Mekaladevi, M
Narayandass, SK
Mangalaraj, D
Lee, HC
机构
[1] Univ Autonoma Barcelona, Dept Fis, Grp Fis Mat 1, E-08193 Barcelona, Spain
[2] Bharathiar Univ, Dept Phys, Thin Film Lab, Coimbatore 641046, Tamil Nadu, India
[3] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea
关键词
Cd0.9Zn0.1Te films; vacuum evaporation; RBS; XRD; AFM; Raman scattering;
D O I
10.1002/crat.200310190
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Cd0.9Zn0.1Te thin films were prepared by vacuum evaporation onto well-cleaned glass substrates maintained at 300, 373 and 473 K. X-ray diffraction studies revealed that the films have zinc blende structure with preferential (I 11) orientation. Raman peak of the room temperature deposited film appeared at 140.30 cm(-1) and 159.65 cm(-1) were for the transverse optic (TO) and longitudinal optic (LO) phonons respectively. The XRD patterns of the higher substrate temperature deposited films exhibited an improvement in the crystallinity of the films. The Raman peak intensity increases and the FWHM decreases for the films deposited at higher substrate temperature. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:328 / 332
页数:5
相关论文
共 50 条
  • [31] Defect Levels in Nuclear Detector Grade Cd0.9Zn0.1Te Crystals
    Pak, Rahmi O.
    Mandal, Krishna C.
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2016, 5 (04) : P3037 - P3040
  • [32] Characteristics of doped indium in Cd0.9Zn0.1Te grown by the Bridgman method
    Li, GQ
    Jie, WQ
    Wang, T
    Gu, Z
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2004, 19 (03) : 457 - 460
  • [33] Comparison of In doped and In, Pb co-doped Cd0.9Zn0.1Te
    Zaman, Yasir
    Jie, Wanqi
    Wang, Tao
    Xu, Lingyan
    He, Yihui
    Xu, Yadong
    Zha, Gangqiang
    Guo, Rongrong
    Fu, Xu
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2015, 790 : 10 - 13
  • [34] Large Area Cd0.9Zn0.1Te Pixelated Detector: Fabrication and Characterization
    Chaudhuri, Sandeep K.
    Khai Nguyen
    Pak, Rahmi O.
    Matei, Liviu
    Buliga, Vladimir
    Groza, Michael
    Burger, Arnold
    Mandal, Krishna C.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2014, 61 (02) : 793 - 798
  • [35] PROPERTIES OF NANOSTRUCTURE ON A SURFACE OF Cd0.9Zn0.1Te COMPOUND BY LASER RADIATION
    Medvid, A.
    Mychko, A.
    Litovchenko, N.
    Strilchuk, O.
    Onufrijevs, P.
    Pludons, A.
    INTERNATIONAL CONFERENCE ON RADIATION INTERACTION WITH MATERIALS AND ITS USE IN TECHNOLOGIES 2008, 2008, : 208 - 211
  • [36] The effective diffusion coefficient and diffusion activation energy of Cd in Cd0.9Zn0.1Te crystal
    Liu Hongtao
    Sang Wenbin
    Li Wanwan
    Zhang Bin
    Min Jiahua
    Zhan Feng
    Cao Zechun
    RARE METAL MATERIALS AND ENGINEERING, 2006, 35 (10) : 1577 - 1580
  • [37] Thermally stimulated current spectroscopy applied on defect characterization in semi-insulating Cd0.9Zn0.1Te
    Nan, Ruihua
    Jie, Wanqi
    Zha, Gangqiang
    Wang, Bei
    Yu, Hui
    JOURNAL OF CRYSTAL GROWTH, 2012, 361 : 25 - 29
  • [38] Effect of superheating and fast cooling on Te inclusions of Cd0.9Zn0.1Te:In crystals grown by vertical gradient freezing
    Bensalah, H.
    Crocco, J.
    Carcelen, V.
    Black, A.
    Zheng, Q.
    Plaza, J. L.
    Dieguez, E.
    JOURNAL OF CRYSTAL GROWTH, 2012, 361 : 5 - 10
  • [39] The effect of chemical polishing on the interface structure and electrical property of Au/Cd0.9Zn0.1Te contact
    Sun, Jie
    Fu, Li
    Nie, Zhongming
    Shi, Yi
    Li, Yapeng
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2014, 115 (04): : 1309 - 1316
  • [40] Optical and electrical properties of indium-doped Cd0.9Zn0.1Te crystal
    Li, Qiang
    Jie, Wanqi
    Fu, Li
    Wang, Tao
    Yang, Ge
    Bai, Xuxu
    Zha, Gangqiang
    JOURNAL OF CRYSTAL GROWTH, 2006, 295 (02) : 124 - 128