Effect of substrate temperature on polycrystalline Cd0.9Zn0.1Te thin films studied by Raman scattering spectroscopy

被引：16
|
作者：
Sridharan, M [1 ]
Mekaladevi, M
Narayandass, SK
Mangalaraj, D
Lee, HC
机构：
[1] Univ Autonoma Barcelona, Dept Fis, Grp Fis Mat 1, E-08193 Barcelona, Spain
[2] Bharathiar Univ, Dept Phys, Thin Film Lab, Coimbatore 641046, Tamil Nadu, India
[3] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2004年 / 39卷 / 04期
关键词：
Cd0.9Zn0.1Te films; vacuum evaporation; RBS; XRD; AFM; Raman scattering;
D O I：
10.1002/crat.200310190
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Cd0.9Zn0.1Te thin films were prepared by vacuum evaporation onto well-cleaned glass substrates maintained at 300, 373 and 473 K. X-ray diffraction studies revealed that the films have zinc blende structure with preferential (I 11) orientation. Raman peak of the room temperature deposited film appeared at 140.30 cm(-1) and 159.65 cm(-1) were for the transverse optic (TO) and longitudinal optic (LO) phonons respectively. The XRD patterns of the higher substrate temperature deposited films exhibited an improvement in the crystallinity of the films. The Raman peak intensity increases and the FWHM decreases for the films deposited at higher substrate temperature. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：328 / 332
页数：5
相关论文
共 50 条
  • [1] Raman scattering studies on polycrystalline Cd0.9Zn0.1Te thin films
    Sridharan, MG
    Mekaladevi, M
    Narayandass, SK
    Mangalaraj, D
    Lee, HC
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2005, 7 (03): : 1479 - 1482
  • [2] Spectroscopic ellipsometry studies on polycrystalline Cd0.9Zn0.1Te thin films
    Sridharan, MG
    Mekaladevi, M
    Rodriguez-Viejo, J
    Narayandass, SK
    Mangalaraj, D
    Lee, HC
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (04): : 782 - 790
  • [3] Annealing of Cd0.9Zn0.1Te in cadmium vapor
    Li, Wan-Wan
    Kang, Sun
    ACTA PHYSICA SINICA, 2007, 56 (11) : 6514 - 6520
  • [4] X-ray diffraction of Cd0.9Zn0.1Te at room temperature
    Nkum, RK
    DISCOVERY AND INNOVATION, 1997, 9 (3-4): : 213 - 216
  • [5] Effect of Cd0.9Zn0.1Te:In Crystals Annealing on Their High-Temperature Electrical Properties
    Fochuk, P.
    Grill, R.
    Nakonechnyi, I.
    Kopach, O.
    Panchuk, O.
    Verzhak, Ye.
    Belas, E.
    Bolotnikov, A. E.
    Yang, G.
    James, R. B.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2011, 58 (05) : 2346 - 2351
  • [6] Band gap of CdTe and Cd0.9Zn0.1Te crystals
    L. A. Kosyachenko
    V. M. Sklyarchuk
    O. V. Sklyarchuk
    O. L. Maslyanchuk
    Semiconductors, 2011, 45 : 1273 - 1280
  • [7] Investigation on Cd0.9Zn0.1Te crystal doped with Al
    Liu, Wei-Hua
    Jie, Wan-Qi
    Wang, Tao
    Xu, Ling-Yan
    Xu, Ya-Dong
    Gongneng Cailiao/Journal of Functional Materials, 2009, 40 (04): : 529 - 531
  • [8] Band gap of CdTe and Cd0.9Zn0.1Te crystals
    Kosyachenko, L. A.
    Sklyarchuk, V. M.
    Sklyarchuk, O. V.
    Maslyanchuk, O. L.
    SEMICONDUCTORS, 2011, 45 (10) : 1273 - 1280
  • [9] Detector surface preparation of Cd0.9Zn0.1Te for electrode patterning
    Crocco, J.
    Zheng, Q.
    Bensalah, H.
    Dieguez, E.
    APPLIED SURFACE SCIENCE, 2012, 258 (07) : 2948 - 2952
  • [10] Irradiation-Induced Defects in Cd0.9Zn0.1Te:Al
    Nan, Ruihua
    Jie, Wanqi
    Zha, Gangqiang
    Wang, Bei
    Xu, Yadong
    Yu, Hui
    JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (11) : 3044 - 3049
12345