Optical and electronic properties of tin quantum wires formed on vicinal surface of GaAs

A number of delta-doped by Sri for a wide range of Sri doping densities structures on vicinal GaAs (001) substrates with a misorientation angle of 30 have been prepared using molecular beam epitaxy growth technique. Because of the relatively high segregation ability, Sn, when deposited on the terraces, may accumulate at the step edges and form quasi-one dimensional channels. Magnetotransport, the Shubnikov de Haas (SdH) and the Hall effects, photoluminescence and photoconductivity have been investigated in the temperature range 0.4-300 K. The Hall resistivity, SdH effect and the magnetoresistance were measured in magnetic fields up to 40 T directed perpendicular or parallel to the plane of the delta-layer. The photoconductivity has been investigated for wavelengths lambda=650-1200 nm in the temperature interval T=4.2-300 K.