Improved electrical properties of La2/3Ba1/3MnO3:Ag0.04 thin films by thermal annealing

La2/3Ba1/3MnO3:Ag-0.04 (LBMO:Ag-0.04) thin films were prepared on single crystalline (001)-orientated LaAlO3 substrates by pulsed laser deposition technique. Thermal annealing with temperatures of 780, 800 and 820 A degrees C has been investigated to improve electrical properties of the films. All the samples are shown along the (00l) orientation in rhombohedral structure with space group. With thermal annealing temperature increasing, insulator-metal transition temperature (T (p)) and resistivity at T (p) () of the epilayer reach optimal value of 288 K and 0.03 Omega A center dot cm, respectively. The electrical properties improvement of the LBMO:Ag-0.04 films is due to an improved film crystallization, oxygen balance and photon scattering suppression. The fitting curves show that the region of ferro-magnetic metallic (FM, T < T (p)) is fitted with grain/domain boundary, electron-electron and magnon scattering mechanism, as well as the region of para-magnetic insulating (PI, T > T (p)) is fitted with adiabatic small polaron hopping mechanism.