A 28-dBm pHEMT Power Amplifier Using Voltage Combiner for K-Band Applications

被引：0
|
作者：
Kool, Bonhoon [1 ]
Park, Changkun [1 ]
Lee, Kyung Ai [1 ]
Chun, Jong-Hoon [2 ]
Hong, Songcheol [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Sch EECS, Taejon 305701, South Korea
[2] Samsung Thales Co, Yongin 499885, South Korea
来源：
2008 EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3 | 2008年
关键词：
D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A K-Band power amplifier was implemented using a 0.25-mu m pHEMT process. A tournament-shaped voltage combiner that combines power by combining voltage was used in the output matching network. The voltage combining method alleviates the drain voltage swing requirement of the power transistor, whose junction breakdown voltage becomes quite low especially for high frequency applications. The chip size of the designed power amplifier is only 2.52 mm(2). The amplifier achieved a P1dB of 28.0 dBm. The measured linear gain was 25 dB at 23.1 GHz. These demonstrate the operation of the tournament-shaped voltage combiner at K-Band.
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页码：524 / +
页数：2
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