High-power AlGaN/GaN HEMTs on resistive silicon substrate

被引：9
|
作者：
Hoël, V
Vellas, N
Gaquiére, C
De Jaeger, JC
Cordier, Y
Semond, E
Natali, F
Massies, J
机构：
[1] USTL, UMR 8520, CNRS, IEMN, F-59652 Villeneuve Dascq, France
[2] CNRS, CRHEA, F-06560 Valbonne, France
来源：
ELECTRONICS LETTERS | 2002年 / 38卷 / 14期
关键词：
D O I：
10.1049/el:20020522
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A process to fabricate AlGaN/GaN HEMTs based on (111) silicon substrate is developed. The device structure is grown on a resistive (111) silicon substrate. The frequency F-t is 28 GHz and the frequency F-max is 50 GHz. At 4 GHz, the power density is 1 W/mm for a 150 x 1 mum(2) device.
引用
收藏
页码：750 / 752
页数：3
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