Direct extraction methodology for geometry-scalable RF-CMOS models

被引：16

作者：

Voinigescu, SP ^{[1
]}

Tazlauanu, M ^{[1
]}

Ho, PC ^{[1
]}

Yang, MT ^{[1
]}

机构：

[1] Univ Toronto, ECE Dept, Toronto, ON M5S 3G4, Canada

来源：

ICMTS 2004: PROCEEDINGS OF THE 2004 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES | 2004年

关键词：

D O I：

10.1109/ICMTS.2004.1309486

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method to directly extract the MOSFET small-signal parameters - including non-quasi-static effects - from Z and Y parameter measurements is presented. This technique is employed to generate a scalable BSIM3v3 model valid for standard, low and high-threshold p- and n-channel MOSFETs at frequencies up to 50 GHz. The model accurately captures cutoff frequency degradation for unit gate finger widths below I g m and was employed to verify the measured jitter of a 10-Gb/s MOS-CML output driver.

引用

页码：235 / 240

页数：6

共 14 条

[1] Direct parameter extraction on RF-CMOS
Pengg, FX
2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2002, : 271 - 274
[2] Direct parameter extraction on RF-CMOS
Pengg, FX
2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2002, : 355 - 358
[3] Geometry-Scalable Parasitic Deembedding Methodology for On-Wafer Microwave Characterization of MOSFETs
Cho, Ming-Hsiang
Chen, David
Lee, Ryan
Peng, An-Sam
Wu, Lin-Kun
Yeh, Chune-Sin
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2009, 56 (02) : 299 - 305
[4] High-frequency scalable current modelling of Si RF-CMOS technology
Bazigos, Antonios
Bucher, Matthias
Sakalas, Paulius
Schroter, Michael
Kraus, Wolfgang
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 12 2008, 2008, 5 (12): : 3681 - +
[5] Analytical model and parameter extraction to account for the pad parasitics in RF-CMOS
Torres-Torres, R
Murphy-Arteaga, R
Reynoso-Hernández, JA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (07) : 1335 - 1342
[6] ESD-RF co-design methodology for the state of the art RF-CMOS blocks
Vassilev, V
Thijs, S
Segura, PL
Wambacq, P
Leroux, P
Groeseneken, G
Natarajan, MI
Maes, HE
Steyaert, M
MICROELECTRONICS RELIABILITY, 2005, 45 (02) : 255 - 268
[7] WCDMA direct-conversion receiver front-end comparison in RF-CMOS and SiGeBiCMOS
Floyd, BA
Reynolds, SK
Zwick, T
Khuon, L
Beukema, T
Pfeiffer, UR
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (04) : 1181 - 1188
[8] EKV3 parameter extraction and characterization of 90nm RF-CMOS technology
Yoshitomi, S.
Bazigos, A.
Bucher, M.
MIXDES 2007: Proceedings of the 14th International Conference on Mixed Design of Integrated Circuits and Systems:, 2007, : 74 - 79
[9] RF characterization and parameter extraction for CMOS device models
Pekarik, John J.
Jagannathan, Basanth
Pan, Li-Hong
Wang, Jing
Groves, Robert
Li, Hongmei
Tian, Xiaowei
Greenberg, David R.
Jin, Zhenrong
Wagner, Lawrence
2007 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS, 2007, : 36 - +
[10] A physically based, scalable MOS varactor model and extraction methodology for RF applications
Victory, J
Yan, ZX
Gildenblat, G
McAndrew, C
Zheng, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2005, 52 (07) : 1343 - 1353

← 1 2 →