A physically based, scalable MOS varactor model and extraction methodology for RF applications

被引：26
|
作者：
Victory, J [1 ]
Yan, ZX
Gildenblat, G
McAndrew, C
Zheng, H
机构：
[1] Jazz Semicond, Newport Beach, CA 92660 USA
[2] Penn State Univ, University Pk, PA 16802 USA
[3] Freescale Semicond, Tempe, AZ 85284 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2005年 / 52卷 / 07期
关键词：
MOS varactors; surface potential; VVCs;
D O I：
10.1109/TED.2005.850693
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A physically based scalable model for MOS varactors, including analytical surface potential based charge modeling and physical geometry and process parameter based parasitic modeling, is proposed. Key device performances of, capacitance and quality factor Q are validated over a wide voltage, frequency, and geometrical space. The model, implemented in Verilog-A for simulator portability, provides for robust and accurate RF simulation of MOS varactors.
引用
收藏
页码：1343 / 1353
页数：11
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