W-Band N-Polar GaN MISHEMTs with High Power and Record 27.8% Efficiency at 94 GHz

被引：0

作者：

Romanczyk, B. ^{[1
]}

Guidry, M. ^{[1
]}

Wienecke, S. ^{[1
]}

Li, H. ^{[1
]}

Ahmadi, E. ^{[1
]}

Zheng, X. ^{[1
]}

Keller, S. ^{[1
]}

Mishra, U. K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Santa Barbara, CA 93106 USA

来源：

2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the W-band power performance of N-polar GaN MISHEMTs demonstrating a record power-added efficiency (PAE) of 27.8% while maintaining an excellent output power density of 3 W/mm and 7.4 dB peak gain at 94 GHz. To enable this performance, a novel device technology is presented that utilizes the advantages of the inverted polarization of N-polar GaN to mitigate dispersion and improve access region conductivity through the addition of a 47.5 nm in-situ GaN cap layer. To obtain these results past work has been extended through pad layout optimization and reduction of lateral dimensions.

引用

页数：4

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