N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz

被引：93

作者：

Wienecke, Steven ^{[1
]}

Romanczyk, Brian ^{[1
]}

Guidry, Matthew ^{[1
]}

Li, Haoran ^{[1
]}

Ahmadi, Elaheh ^{[1
]}

Hestroffer, Karine ^{[1
]}

Zheng, Xun ^{[1
]}

Keller, Stacia ^{[1
]}

Mishra, Umesh K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 03期

关键词：

GaN; high-electron-mobility-transistor (HEMT); millimeter (mm) wave; N-Polar; power amplifier; W-band; ELECTRON-MOBILITY TRANSISTORS;

D O I：

10.1109/LED.2017.2653192

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel N-Polar GaN cap (MIS) high electron mobility transistor demonstrating record 6.7-W/mm power density with an associated power-added efficiency of 14.4% at 94 GHz is presented. This state-of-the-art power performance is enabled by utilizing the inherent polarization fields of N-Polar GaN in combination with a 47.5-nm in situ GaN cap layer to simultaneously mitigate dispersion and improve access region conductivity. These excellent results build upon past work through the use of optimized device dimensions and a transition from a sapphire to a SiC substrate for reduced self-heating.

引用

页码：359 / 362

页数：4

共 41 条

[1] N-Polar GaN Cap MISHEMT with Record 6.7 W/mm at 94 GHz
Wienecke, Steven
Romanczyk, Brian
Guidry, Matthew
Li, Haoran
Ahmadi, Elaheh
Zheng, Xun
Hestroffer, Karine
Keller, Stacia
Mishra, Umesh K.
2016 74TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2016,
[2] mm-Wave N-Polar GaN MISHEMT with a Self-Aligned Recessed Gate Exhibiting Record 4.2 W/mm at 94 GHz on Sapphire
Romanczyk, Brian
Wienecke, Steven
Guidry, Matthew
Li, Haoran
Hestroffer, Karine
Ahmadi, Elaheh
Zheng, Xun
Keller, Stacia
Mishra, Umesh K.
2016 74TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2016,
[3] Record 34.2% efficient mm-wave N-polar AlGaN/GaN MISHEMT at 87 GHz
Romanczyk, B.
Guidry, M.
Wienecke, S.
Li, H.
Ahmadi, E.
Zheng, X.
Keller, S.
Mishra, U. K.
ELECTRONICS LETTERS, 2016, 52 (21) : 1813 - 1814
[4] N-Polar Deep Recess MISHEMTs With Record 2.9 W/mm at 94 GHz
Wienecke, Steven
Romanczyk, Brian
Guidry, Matthew
Li, Haoran
Zheng, Xun
Ahmadi, Elaheh
Hestroffer, Karine
Megalini, Ludovico
Keller, Stacia
Mishra, Umesh K.
IEEE ELECTRON DEVICE LETTERS, 2016, 37 (06) : 713 - 716
[5] W-Band N-Polar GaN MISHEMTs with High Power and Record 27.8% Efficiency at 94 GHz
Romanczyk, B.
Guidry, M.
Wienecke, S.
Li, H.
Ahmadi, E.
Zheng, X.
Keller, S.
Mishra, U. K.
2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2016,
[6] Small-Signal Model Extraction of mm-Wave N-polar GaN MISHEMT Exhibiting Record Performance: Analysis of Gain and Validation by 94 GHz Loadpull
Guidry, Matthew
Wienecke, Steven
Romanczyk, Brian
Li, Haoran
Zheng, Xun
Ahmadi, Elahe
Hestroffer, Karine
Keller, Stacia
Mishra, Umesh K.
2016 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2016,
[7] Record 94 GHz performance from N-polar GaN-on-Sapphire MIS-HEMTs: 5.8 W/mm and 38.5% PAE
Li, W.
Romanczyk, B.
Akso, E.
Guidry, M.
Hatui, N.
Wurm, C.
Liu, W.
Shrestha, P.
Collins, H.
Clymore, C.
Keller, S.
Mishra, U. K.
2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM, 2022,
[8] N-Polar GaN MISHEMT With Bias-Insensitive Linearity at 30 GHz
Collins, Henry
Akso, Emre
Hatui, Nirupam
Clymore, Christopher J.
Wurm, Christian
Hamwey, Robert
Guidry, Matthew
Keller, Stacia
Mishra, Umesh K.
IEEE MICROWAVE AND WIRELESS TECHNOLOGY LETTERS, 2024, 34 (03): : 287 - 290
[9] Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs
Romanczyk, Brian
Wienecke, Steven
Guidry, Matthew
Li, Haoran
Ahmadi, Elaheh
Zheng, Xun
Keller, Stacia
Mishra, Umesh K.
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (01) : 45 - 50
[10] 6.2 W/Mm and Record 33.8 PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates
Liu, Wenjian
Romanczyk, Brian
Guidry, Matthew
Hatui, Nirupam
Wurm, Christian
Li, Weiyi
Shrestha, Pawana
Zheng, Xun
Keller, Stacia
Mishra, Umesh K.
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2021, 31 (06) : 748 - 751

← 1 2 3 4 5 →