A novel high-density embedded AND-type split gate flash memory

被引：4

作者：

Shen, Wen Chao ^{[1
]}

Wang, Ching-Hua ^{[1
]}

Pan, Hsin-Wei ^{[1
]}

Yang, Zhi-Sung ^{[1
]}

Chih, Yue Der ^{[2
]}

Lee, Te-Liang ^{[1
]}

Lien, Chiu-Wang ^{[1
]}

King, Ya-Chin ^{[1
]}

Lin, Chrong Jung ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Inst Elect Engn, Hsinchu 300, Taiwan

[2] TSMC, Design Technol Div, Hsinchu 300, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 04期

关键词：

SOURCE-SIDE INJECTION; ANALYTICAL-MODEL; CELL; OPTIMIZATION;

D O I：

10.7567/JJAP.53.04ED08

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new high-density AND-type split gate (ASG) flash memory realized by the Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 mu m embedded flash process has been successfully demonstrated and fabricated. This ASG flash memory has a pair of symmetric floating gates for performance of 2 bits/cell. By device and process optimization, this cell can operate via highly efficient source side injection (SSI) and Fowler-Nordheim (FN) tunneling mechanisms for program and erase, respectively. Moreover, ASG flash memory significantly shrinks 50% of the unit cell size by sharing word line (WL) and eliminating bit line (BL) contact. Since the ASG flash memory cell and process used are inherited from proven split-gate technology, this work also provides a highly reliable solution for high-density embedded flash application. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

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