The Effect of Bismuth on the Structural Perfection and the Luminescent Properties of Thin-Film Elastically Stressed Al x In y Ga1-x-y Bi z Sb1-z/GaSb Heterostructures

被引：3
|
作者：
Alfimova, D. L. [1 ]
Lunina, M. L. [1 ]
Lunin, L. S. [1 ,2 ]
Pashchenko, A. S. [1 ]
Kazakova, A. E. [2 ]
机构：
[1] Russian Acad Sci, Southern Sci Ctr, Rostov Na Donu 344006, Russia
[2] Platov State Polytech Univ, Novocherkassk 346400, Rostov Oblast, Russia
来源：
PHYSICS OF THE SOLID STATE | 2018年 / 60卷 / 07期
基金：
俄罗斯基础研究基金会;
关键词：
ALGAASP/GAAS HETEROSTRUCTURES; PHOTOVOLTAIC CONVERTERS; TEMPERATURE-GRADIENT; OPTICAL-PROPERTIES; EFFICIENCY; ALLOYS; PHOTODETECTORS; PARAMETERS; GROWTH; PHASE;
D O I：
10.1134/S1063783418070028
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The effect of bismuth on the structural perfection and the luminescent properties of Al (x) In (y) Ga1-x-y Bi (z) Sb1-z /GaSb heterostructures has been studied. The optimal parameters of the process of zone recrystallization with temperature gradient at which epitaxial AlInGaBiSb layers have the minimum roughness and high structural perfection have been revealed: temperature gradient 1 G 30 K/cm, the liquid zone thickness 60 l 100 mu m, the temperature range 773 K T 873 K, and bismuth concentration 0.3-0.4 mol fraction.
引用
收藏
页码：1280 / 1286
页数：7
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