Effect of carbon monoxide on the capacitance-voltage characteristics of Pd-SiO2-Si MOS diodes

被引:0
|
作者
Kalygina, V. M. [1 ]
Gricyk, V. Ju. [1 ]
机构
[1] Tomsk VV Kuibyshev State Univ, Siberian Physicotech Inst, Tomsk 634050, Russia
关键词
SENSORS; CO; SENSITIVITY; PLATINUM;
D O I
10.1134/S1063782609060128
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The effect of carbon monoxide on the capacitance-voltage characteristics of metal-oxide-semiconductor diodes of the Pd-SiO2-n-Si type and the time dependences of changes in the capacitance at fixed diode biases have been investigated. The change in the capacitance in a CO-air gas mixture, in contrast to other reducing gases, is nonmonotonic. During exposure to a gas atmosphere, the capacitance-voltage characteristics first shift to higher positive biases, then regain their initial values, and finally shift to lower biases. A sharp decrease in the capacitance during the first several seconds of a gas pulse is followed by a slower increase in capacitance to a new steadystate value, which depends on the carbon monoxide concentration. The results are explained taking into account the bridge and linear types of CO adsorption on a SiO2 surface.
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页码:751 / 755
页数:5
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