Study of Nitrogen High-Pressure Annealing on InGaZnO Thin-Film Transistors

被引：57

作者：

Yoon, Seokhyun ^{[1
]}

Tak, Young Jun ^{[1
]}

Yoon, Doo Hyun ^{[1
]}

Choi, Uy Hyun ^{[1
]}

Park, Jin-Seong ^{[2
]}

Ahn, Byung Du ^{[1
]}

Kim, Hyun Jae ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[2] Hanyang Univ, Div Mat Sci & Engn, Seoul 133719, South Korea

来源：

ACS APPLIED MATERIALS & INTERFACES | 2014年 / 6卷 / 16期

基金：

新加坡国家研究基金会;

关键词：

high-pressure annealing InGaZnO; post process; thin-film transistor; oxide thin-film transistor; AMORPHOUS OXIDE SEMICONDUCTOR; ELECTRICAL PERFORMANCE; ELECTRONIC-STRUCTURE; CARRIER TRANSPORT; LOW-TEMPERATURE;

D O I：

10.1021/am502571w

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We studied the effects of high-pressure annealing (HPA) on InGaZnO (IGZO) thin-film transistors (TFTs). HPA was proceeded after TFT fabrication as a post process to improve electrical performance and stability. We used N-2 as the pressurized gas. The applied pressures were 1 and 3 MPa at 200 degrees C. For N-2 HPA under 3 MPa at 200 degrees C, field-effect mobility and the threshold voltage shift under a positive bias temperature stress were improved by 3.31 to 8.82 cm(2)/(V s) and 8.90 to 4.50 V, respectively. The improved electrical performance and stability were due to structural relaxation by HPA, which leads to increased carrier concentration and decreased oxygen vacancy.

引用

页码：13496 / 13501

页数：6

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