Study of Nitrogen High-Pressure Annealing on InGaZnO Thin-Film Transistors

被引：57

作者：

Yoon, Seokhyun ^{[1
]}

Tak, Young Jun ^{[1
]}

Yoon, Doo Hyun ^{[1
]}

Choi, Uy Hyun ^{[1
]}

Park, Jin-Seong ^{[2
]}

Ahn, Byung Du ^{[1
]}

Kim, Hyun Jae ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

[2] Hanyang Univ, Div Mat Sci & Engn, Seoul 133719, South Korea

来源：

ACS APPLIED MATERIALS & INTERFACES | 2014年 / 6卷 / 16期

基金：

新加坡国家研究基金会;

关键词：

high-pressure annealing InGaZnO; post process; thin-film transistor; oxide thin-film transistor; AMORPHOUS OXIDE SEMICONDUCTOR; ELECTRICAL PERFORMANCE; ELECTRONIC-STRUCTURE; CARRIER TRANSPORT; LOW-TEMPERATURE;

D O I：

10.1021/am502571w

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We studied the effects of high-pressure annealing (HPA) on InGaZnO (IGZO) thin-film transistors (TFTs). HPA was proceeded after TFT fabrication as a post process to improve electrical performance and stability. We used N-2 as the pressurized gas. The applied pressures were 1 and 3 MPa at 200 degrees C. For N-2 HPA under 3 MPa at 200 degrees C, field-effect mobility and the threshold voltage shift under a positive bias temperature stress were improved by 3.31 to 8.82 cm(2)/(V s) and 8.90 to 4.50 V, respectively. The improved electrical performance and stability were due to structural relaxation by HPA, which leads to increased carrier concentration and decreased oxygen vacancy.

引用

页码：13496 / 13501

页数：6

共 50 条

[1] Study of high-pressure hydrogen annealing effects on InGaZnO thin-film transistors
Lee, Kyumin
Jung, Laeyong
Hwang, Hyunsang
APPLIED PHYSICS LETTERS, 2022, 121 (07)
[2] Hydrogenated IGZO Thin-Film Transistors Using High-Pressure Hydrogen Annealing
Oh, Se-I
Choi, Godeuni
Hwang, Hyunsang
Lu, Wu
Jang, Jae-Hyung
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (08) : 2537 - 2541
[3] Atmospheric Pressure Processed InGaZnO Thin-Film Transistors
Furuta, Mamoru
Kawaharamura, Toshiyuki
2013 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK2013), 2013,
[4] Defect reduction in photon-accelerated negative bias instability of InGaZnO thin-film transistors by high-pressure water vapor annealing
Rim, You Seung
Jeong, Wooho
Ahn, Byung Du
Kim, Hyun Jae
APPLIED PHYSICS LETTERS, 2013, 102 (14)
[5] Photoluminescence Study of Amorphous InGaZnO Thin-Film Transistors
Yu, Eric Kai-Hsiang
Lai, Po-Chun
Kanicki, Jerzy
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (03) : 1258 - 1261
[6] High-Mobility Amorphous InGaZnO Thin-Film Transistors With Nitrogen Introduced via Low-Temperature Annealing
Yu, Yining
Lv, Nannan
Zhang, Dongli
Wei, Yiran
Wang, Mingxiang
IEEE ELECTRON DEVICE LETTERS, 2021, 42 (10) : 1480 - 1483
[7] Development of annealing process for solution-derived high performance InGaZnO thin-film transistors
Kim, Kwan-Soo
Lee, Se-Won
Oh, Se-Man
Cho, Won-Ju
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2013, 178 (12): : 811 - 815
[8] The Effect of Microwave Annealing Time on the Electrical Characteristics for InGaZnO Thin-Film Transistors
Jang, Seong Cheol
Park, Ji-Min
Kim, Hyoung-Do
Lee, Hyun Seok
Kim, Hyun-Suk
KOREAN JOURNAL OF MATERIALS RESEARCH, 2020, 30 (11): : 615 - 620
[9] Effects of high-pressure H2O-annealing on amorphous IGZO thin-film transistors
Shin, Hyun Soo
Rim, You Seung
Mo, Yeon-Gon
Choi, Chaun Gi
Kim, Hyun Jae
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (09): : 2231 - 2234
[10] Sensor applications of InGaZnO thin-film transistors
Takechi, Kazushige
Lwamatsu, Shinnosuke
JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (09)

← 1 2 3 4 5 →