Low-Cost High-Efficient 10-Watt X-band High-Power Amplifier

被引：2
|
作者：
van der Bent, G. [1 ]
de Hek, A. P. [1 ]
Bessemoulin, A. [2 ]
van Vliet, Frank. E. [1 ]
机构：
[1] TNO Def Secur & Safety, Oude Waalsdorperweg 63, NL-2509 JG The Hague, Netherlands
[2] Mimix Asia, Hsinchu, Taiwan
来源：
IEEE INTERNATIONAL CONFERENCE ON MICROWAVES, COMMUNICATIONS, ANTENNAS AND ELECTRONICS SYSTEMS (COMCAS 2009) | 2009年
关键词：
MMIC power Amplifiers;
D O I：
10.1109/COMCAS.2009.5386072
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high power X-band amplifier with an output power over 10 Watts and a Power Added Efficiency (PAE) in excess of 40 percent has been developed. The design was fabricated in a 0.25 mu m pHEMT GaAs process (WIN Semiconductor PP25-01). The small die area in combination with a 6-inch wafer technology provides the possibility for low cost production of a high performance X-band T/R chipset.
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页数：6
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