Low-Cost High-Efficient 10-Watt X-band High-Power Amplifier

被引：2

作者：

van der Bent, G. ^{[1
]}

de Hek, A. P. ^{[1
]}

Bessemoulin, A. ^{[2
]}

van Vliet, Frank. E. ^{[1
]}

机构：

[1] TNO Def Secur & Safety, Oude Waalsdorperweg 63, NL-2509 JG The Hague, Netherlands

[2] Mimix Asia, Hsinchu, Taiwan

来源：

IEEE INTERNATIONAL CONFERENCE ON MICROWAVES, COMMUNICATIONS, ANTENNAS AND ELECTRONICS SYSTEMS (COMCAS 2009) | 2009年

关键词：

MMIC power Amplifiers;

D O I：

10.1109/COMCAS.2009.5386072

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high power X-band amplifier with an output power over 10 Watts and a Power Added Efficiency (PAE) in excess of 40 percent has been developed. The design was fabricated in a 0.25 mu m pHEMT GaAs process (WIN Semiconductor PP25-01). The small die area in combination with a 6-inch wafer technology provides the possibility for low cost production of a high performance X-band T/R chipset.

引用

页数：6

共 50 条

[1] A cost-effective 10 watt X-band high power amplifier and 1 Watt driver amplifier chip-set
de Hek, A. P.
van der Bent, G.
van Wanum, M.
van Vliet, F. E.
[J]. GAAS 2005: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Conference Proceedings, 2005, : 37 - 40
[2] A MULTISTAGE HIGH-POWER AVALANCHE AMPLIFIER AT X-BAND
SCHERER, EF
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1969, SC 4 (06) : 396 - &
[3] DESIGN OF A HIGH-POWER X-BAND MAGNICON AMPLIFIER
NEZHEVENKO, OA
YAKOVLEV, VP
GOLD, SH
HAFIZI, B
[J]. IEEE TRANSACTIONS ON PLASMA SCIENCE, 1994, 22 (05) : 785 - 795
[4] Efficient operation of a high-power X-band traveling wave tube amplifier
Wang, P
Xu, Z
Ivers, JD
Nation, JA
Naqvi, S
Schachter, L
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (16) : 2506 - 2507
[5] Electron gun for a high-power X-band magnicon amplifier
Yakovlev, VP
Nezhevenko, OA
True, RB
[J]. PROCEEDINGS OF THE 1997 PARTICLE ACCELERATOR CONFERENCE, VOLS 1-3: PLENARY AND SPECIAL SESSIONS ACCELERATORS AND STORAGE RINGS - BEAM DYNAMICS, INSTRUMENTATION, AND CONTROLS, 1998, : 3186 - 3188
[6] EFFICIENT OPERATION OF A HIGH-POWER X-BAND GYROKLYSTRON
LAWSON, W
CALAME, JP
HOGAN, B
LATHAM, PE
READ, ME
GRANATSTEIN, VL
REISER, M
STRIFFLER, CD
[J]. PHYSICAL REVIEW LETTERS, 1991, 67 (04) : 520 - 523
[7] High power-density monolithic linear X-band power amplifier using a low-cost MESFET technology
Negra, RT
Vogt, R
Bächtold, W
[J]. PROCEEDINGS OF THE INTERNATIONAL 2003 SBMO/IEEE MTT-S INTERNATIONAL MICROWAVE AND OPTOELECTRONICS CONFERENCE - IMOC 2003, VOLS I AND II, 2003, : 877 - 880
[8] X-BAND HIGH-POWER AMPLIFIER WITH A MAGNETICALLY COUPLED POWER-COMBINER
Lee, Kyung-Ai
Park, Changkun
Chun, Jong-Hoon
Hong, Songcheol
[J]. MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 2010, 52 (01) : 110 - 113
[9] A HIGH-POWER X-BAND KLYSTRON
HAYASHI, K
TANAKA, T
HEMMI, K
IYEKI, H
ONODERA, T
[J]. 1989 INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 1989, : 371 - 373
[10] Package Modeling and Characterization of C-Band 10-Watt High-Power Amplifier Monolithic Microwave Integrated Circuit used in High-Reliability Applications
Gugulothu R.
Bhalke S.
Lalkishore K.
Dasari R.
[J]. Journal of The Institution of Engineers (India): Series B, 2022, 103 (05): : 1677 - 1685

← 1 2 3 4 5 →