Surface mechanisms in homoepitaxial growth on α-SiC {0001}-vicinal faces

被引：7

作者：

Nakamura, S ^{[1
]}

Kimoto, T ^{[1
]}

Matsunami, H ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2 | 2004年 / 457-460卷

关键词：

chemical vapor deposition (CVD); homoepitaxial growth; {0001}-vicinal faces; atomic force-microscopy (AFM); surface step structures;

D O I：

10.4028/www.scientific.net/MSF.457-460.163

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper discusses surface mechanisms in homoepitaxial growth of alpha-SiC {0001}-vicinal faces, regarding to (i) competition between step-flow and spiral growth on 6H-SiC, and (ii) role of off-angle and C/Si ratio for surface defect formation on 4H-SiC. For the competition between step-flow and spiral growth, a high C/Si ratio was found to enhance spiral growth, while a low C/Si ratio to enhance step-flow growth. For the surface defect formation on (0001)(Si), a large off-angle and low C/Si ratio are preferrable to suppress major surface defects. In the case of (0001)(c), thermal oxidation can be used to remove surface damages, thus suppressing major surface defects.

引用

页码：163 / 168

页数：6

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