Magnetic engineering in 3d transition metals on phosphorene by strain

被引:17
|
作者
Cai, Xiaolin [1 ,2 ,3 ]
Niu, Chunyao [1 ,2 ]
Wang, Jianjun [4 ]
Yu, Weiyang [1 ,2 ,3 ]
Ren, XiaoYan [1 ,2 ]
Zhu, Zhili [1 ,2 ]
机构
[1] Zhengzhou Univ, Int Lab Quantum Funct Mat Henan, Zhengzhou 450001, Peoples R China
[2] Zhengzhou Univ, Sch Phys & Engn, Zhengzhou 450001, Peoples R China
[3] Henan Polytech Univ, Sch Phys & Elect Informat Engn, Jiaozuo 454000, Peoples R China
[4] Zhongyuan Univ Technol, Coll Sci, Zhengzhou 450007, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
Phosphorene; 3d transition metals; Magnetic properties; Strain effects; BLACK PHOSPHORUS; TUNABLE MAGNETISM; ATOM; MONOLAYER;
D O I
10.1016/j.physleta.2017.02.012
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Using first-principles density functional theory (DFT) calculations, we systematically investigate the strain effects on the adsorption energies, magnetic ordering and electronic properties of 3d transition metal (TM) atoms (from Sc to Co) adsorbed on phosphorene (P). We find that the adsorption energy of TM can be enhanced by compressive strain whereas weakened by tensile strain. Our results show that strain plays a decisive role in the magnetic moments as well as the magnetic coupling states of TM adatoms. Importantly, the transitions from antiferromagnetic (AFM) state to ferromagnetic (FM) state or to another different AFM ordering can be induced by strain effect. In addition, we observe the semiconductor to metal or half-metal transitions in some TM@P systems by applying strain. Our findings shed a new light on precisely engineering the magnetic properties and electronic properties of the TM@P systems, which will have great potential applications in spin electronics and other related fields. (C) 2017 Elsevier B.V. All rights reserved.
引用
收藏
页码:1236 / 1240
页数:5
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