Scaling law of hydrogen evolution reaction for InSe monolayer with 3d transition metals doping and strain engineering

Recently, two dimensional In Se attracts great attentions as potential hydrogen production photocatalysts.Here, comprehensive investigations on the hydrogen evolution reaction activity of In Se monolayer with3 d transition metal doping and biaxial strain were performed based on the density functional theory.Transition metal dopants significantly increase the bonding strength between H and Se, and then adjust the hydrogen adsorption free energy to 0.02 e V by Zn doping. The enhanced hydrogen evolution reaction activity results from less electron occupying H 1 s-Se 4 pzanti-bonding states, which is well correlated with the pzband center level. Importantly, the universal scalling law was proposed to descript the evolution of hydrogen adsorption free energy including both doping and strain effects. Moreover, with appropriate band alignment, optical absorption, and carriers separation ability, Zn doped In Se monolayer is considered as a promising candidate of visible-light photocatalyst for hydrogen production.