Effect of annealing temperature on the microstructure and resistivity of Ge2Sb2Te5 films

被引：0
|
作者：
Liu, B [1 ]
Song, ZT
Feng, SL
Chen, B
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Funct Semicond Film Engn & Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China
[2] Silicon Storage Technol Inc, Sunnyvale, CA 94086 USA
来源：
CHINESE PHYSICS LETTERS | 2004年 / 21卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The effect of annealing temperature on crystallization of amorphous Ge2Sb2Te5 films with thickness of 40 nm is studied by TEM and AFM methods. The relationship between microstructure and resistivity of the Ge2Sb2Te5 film is investigated. From the TEM measurements, the grain size of crystallites increases gradually as the annealing temperature increases. When the annealing temperature is too high, voids are formed, which may originate from evaporation of the Ge2Sb2Te5 film at the elevated temperatures, formation of sink, being nucleated by residual vacancies, and surface roughness. The resistivity of the Ge2Sb2Te5 film decreases with the increasing annealing temperature and has slight changes when the temperature is higher than 400degreesC. Phase transitions and scattering of crystallite boundaries may be the major factors affecting the resistivity of the Ge2Sb2Te5 film.
引用
收藏
页码：1143 / 1146
页数：4
相关论文
共 50 条
  • [21] Structural transformations in thin Ge2Sb2Te5 films
    Kozyukhin, S. A.
    Sherchenkov, A. A.
    Gorshkova, E. V.
    Kudoyarova, V. Kh.
    Vargunin, A. I.
    INORGANIC MATERIALS, 2009, 45 (04) : 361 - 365
  • [22] Switching effects in the films based on Ge2Sb2Te5
    Kozyukhin, S. A.
    Kuz'minykh, A. S.
    Mityagin, A. Yu.
    Khlopov, B. V.
    Chucheva, G. V.
    JOURNAL OF COMMUNICATIONS TECHNOLOGY AND ELECTRONICS, 2011, 56 (02) : 188 - 191
  • [23] Structural transformations in thin Ge2Sb2Te5 films
    S. A. Kozyukhin
    A. A. Sherchenkov
    E. V. Gorshkova
    V. Kh. Kudoyarova
    A. I. Vargunin
    Inorganic Materials, 2009, 45 : 361 - 365
  • [24] Multilevel Recording in Ge2Sb2Te5 Thin Films
    S. A. Fefelov
    L. P. Kazakova
    N. A. Bogoslovskiy
    A. B. Bylev
    A. O. Yakubov
    Semiconductors, 2020, 54 : 450 - 453
  • [25] Multilevel Recording in Ge2Sb2Te5 Thin Films
    Fefelov, S. A.
    Kazakova, L. P.
    Bogoslovskiy, N. A.
    Bylev, A. B.
    Yakubov, A. O.
    SEMICONDUCTORS, 2020, 54 (04) : 450 - 453
  • [26] Temperature dependent optical constants of amorphous Ge2Sb2Te5 thin films
    Vinod, E. M.
    Naik, Ramakanta
    Faiyas, A. P. A.
    Ganesan, R.
    Sangunni, K. S.
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2010, 356 (41-42) : 2172 - 2174
  • [27] The correlation of electrical conductivity with the microstructure of Ge2Sb2Te5 thin films alloyed with Sn
    Yin, Qixun
    Chen, Leng
    MATERIALS RESEARCH EXPRESS, 2017, 4 (01)
  • [28] Comparison of thermal stabilities between Zr9(Ge2Sb2Te5)91 and Ge2Sb2Te5 phase change films
    Li, Zengguang
    Lu, Yegang
    Ma, Yadong
    Song, Sannian
    Shen, Xiang
    Wang, Guoxiang
    Dai, Shixun
    Song, Zhitang
    2016 INTERNATIONAL WORKSHOP ON INFORMATION DATA STORAGE AND TENTH INTERNATIONAL SYMPOSIUM ON OPTICAL STORAGE, 2016, 9818
  • [29] A comparison of Ge, Sb and Te thermal diffusion through Ge2Sb2Te5
    Luong, Minh Anh
    Ran, Sijia
    Sabbione, Chiara
    Claverie, Alain
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2023, 164
  • [30] Dynamic threshold switching behavior of Ge2Sb2Te5 and sb-doped Ge2Sb2Te5 thin films using scanning electrical nanoprobe
    Zhou, P.
    Shin, Y. C.
    Choi, B. J.
    Choi, S.
    Hwang, C. S.
    Lin, Y. Y.
    Lv, H. B.
    Yan, X. J.
    Tang, T. A.
    Chen, L. Y.
    Chen, B. M.
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2007, 10 (09) : H281 - H283
12345