Single-mode lasers operating at lambda approximate to 9 mu m in continuous wave up to 423 K (150 degrees C) were achieved by the combination of strong distributed-feedback coupling, a narrow gain active region design, low intersubband, and free-carrier losses as well as a good thermal management. Tuning of 10 cm(-1) or 0.9% of the center frequency was achieved by heating the device. The threshold current density varies from 1.1 kA/cm(2) at 303 K to 2.4 kA/cm(2) at 423 K. Other devices with low electrical power consumption of 1.6 and 3.8 W for an optical output power of 16 and 100 mW have been demonstrated at 263 K.
机构:
Institute of Physics, University of Neuchâtel, 1 A.-L. Breguet, CH-2000 Neuchâtel, SwitzerlandInstitute of Physics, University of Neuchâtel, 1 A.-L. Breguet, CH-2000 Neuchâtel, Switzerland
Hofstetter, Daniel
Beck, Mattias
论文数: 0引用数: 0
h-index: 0
机构:
Institute of Physics, University of Neuchâtel, 1 A.-L. Breguet, CH-2000 Neuchâtel, SwitzerlandInstitute of Physics, University of Neuchâtel, 1 A.-L. Breguet, CH-2000 Neuchâtel, Switzerland
Beck, Mattias
Faist, Jérôme
论文数: 0引用数: 0
h-index: 0
机构:
Institute of Physics, University of Neuchâtel, 1 A.-L. Breguet, CH-2000 Neuchâtel, SwitzerlandInstitute of Physics, University of Neuchâtel, 1 A.-L. Breguet, CH-2000 Neuchâtel, Switzerland
Faist, Jérôme
Nägele, Markus
论文数: 0引用数: 0
h-index: 0
机构:
Institute of Quantum Electronics, Swiss Fed. Institute of Technology, CH-8093 Zürich, SwitzerlandInstitute of Physics, University of Neuchâtel, 1 A.-L. Breguet, CH-2000 Neuchâtel, Switzerland
Nägele, Markus
Sigrist, Markus W.
论文数: 0引用数: 0
h-index: 0
机构:
Institute of Quantum Electronics, Swiss Fed. Institute of Technology, CH-8093 Zürich, SwitzerlandInstitute of Physics, University of Neuchâtel, 1 A.-L. Breguet, CH-2000 Neuchâtel, Switzerland
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Tsinghua Univ, Dept Elect Engn, Beijing 100084, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Zhang, Jinchuan
Wang, Lijun
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Wang, Lijun
Liu, Wanfeng
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Liu, Wanfeng
Liu, Fengqi
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Liu, Fengqi
Zhao, Lihua
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Zhao, Lihua
Zhai, Shenqiang
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Zhai, Shenqiang
Liu, Junqi
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
Liu, Junqi
Wang, Zhanguo
论文数: 0引用数: 0
h-index: 0
机构:
Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R ChinaChinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China