Investigation of photoelectric properties of ZnSe:Cr and ZnTe:V:Al by picosecond four-wave mixing technique

被引：3
|
作者：
Kadys, A
Sudzius, M
Jarasiunas, K
Ivanov, V
Godlewski, M
Launay, JC
机构：
[1] Vilnius State Univ, Inst Mat Sci & Appl Res, Dept Semicond Optoelect, LT-10222 Vilnius, Lithuania
[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[3] Cardinal S Wyszynski Univ, Coll Sci, Warsaw, Poland
[4] ICMCB, F-33608 Pessac, France
来源：
ACTA PHYSICA POLONICA A | 2004年 / 105卷 / 06期
关键词：
D O I：
10.12693/APhysPolA.105.651
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Role of deep impurity levels in carrier generation, transport, and recombination were investigated in bulk ZnSe:Cr and ZnTe:V:Al crystals by four-wave mixing technique. The temporal and exposure dependencies of optical nonlinearities in ZnSe:Cr evidenced an influence of Cr1+/Cr2+ states in carrier generation, exhibited very fast carrier relaxation, and revealed the presence of competing recombination mechanisms. Similar investigations in ZnTe:V:Al showed an effective carrier generation from Al-induced defect complexes as well as very fast carrier capture by Zn-vacancies.
引用
收藏
页码：651 / 657
页数：7
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