Structural effects of carbon in GaSb grown by metalorganic vapor phase epitaxy

被引:1
|
作者
Watkins, SP [1 ]
Wiersma, RD [1 ]
Wang, CX [1 ]
Pitts, OJ [1 ]
Bolognesi, CR [1 ]
机构
[1] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada
关键词
characterization; doping; high resolution X-ray diffraction; metalorganic vapor phase epitaxy; antimonides; semiconducting materials;
D O I
10.1016/S0022-0248(02)01925-5
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
High-resolution X-ray diffraction. Hall effect and secondary ion mass spectrometry measurements (SIMS) were used to study the effect of carbon doping on the lattice constant of GaSb. A linear increase in tensile strain as a function of carbon concentration was observed in the range from 1 x 10(19) to 1 x 10(20) cm The observed strains are consistent with carbon incorporating as a simple substitutional acceptor up to at least 1 x 10(20) cm(-3), SIMS measurements show that the total carbon concentration is linearly proportional to the CCl4 source flows. Whereas the hydrogen concentration increases super-linearly. Nevertheless. the ratio of hydrogen to carbon is no greater than 9% of the maximum incorporated carbon concentration. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:274 / 278
页数:5
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