Experimental setup for non-destructive measurement of tunneling currents in semiconductor devices

被引：3

作者：

Chiquet, Philippe ^{[1
]}

Masson, Pascal ^{[2
]}

Postel-Pellerin, Jeremy ^{[1
]}

Laffont, Romain ^{[1
]}

Micolau, Gilles ^{[3
]}

Lalande, Frederic ^{[1
]}

Regnier, Arnaud ^{[4
]}

机构：

[1] Aix Marseille Univ, CNRS, IM2NP, UMR 7334, F-13450 Marseille 20, France

[2] Univ Nice Sophia Antipolis, EPIB, Polytech Nice Sophia, F-06410 Biot, France

[3] UAPV, INRA, EMMAH, UMR 1114, Avignon, France

[4] ST MICROELECTRONICS, ZI Rousset, F-13100 Rousset, France

来源：

MEASUREMENT | 2014年 / 54卷

关键词：

Electrical measurements; Semiconductor devices; Non-destructive measurements; Transient measurements; Tunneling currents; Non-volatile memory; HOLE INJECTION; VOLTAGE; STRESS; MODEL; TEMPERATURE; CONDUCTION; SILICON; OXIDES; IMPACT; CELLS;

D O I：

10.1016/j.measurement.2014.02.015

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new experimental setup used to perform non-destructive measurement of electrical quantities on semiconductor devices is described in this paper. The particular case of tunneling current measurement in n-type semiconductor-oxide-semiconductor (SOS) capacitors, whose dielectrics play a crucial role in non-volatile memories, has been investigated. When the gates of such devices are polarized with a sufficient bias voltage while the other terminals are grounded, tunnel conduction of electrons through the thin oxide layer is allowed. Typical tunneling current measurements obtained with this advanced setup are presented and compared to the results yielded by older standard experimental protocols. An application to the experimental observation of the temperature dependence of the tunneling current is proposed. Conclusions about the benefits of this kind of electrical measurements are then drawn. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：234 / 240

页数：7

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