Electron Blocking Layer Free AlGaN Deep-Ultraviolet Light Emitting Diodes

被引：0
|
作者：
Jain, Barsha [1 ]
Velpula, Ravi Teja [1 ]
Bui, Ha Quoc Thang [1 ]
Tumuna, Moses [1 ]
Jude, Jeffrey [1 ]
Nguyen, H. P. T. [1 ]
机构：
[1] New Jersey Inst Technol, Dept Elect & Comp Engn, 323 Dr MLK Jr Blvd, Newark, NJ 07102 USA
来源：
2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2020年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Performance of the deep-ultraviolet LEDs is improved by replacing conventional p-doped electron blocking layer with an intrinsic 2 nm thin AlGaN strip in the last quantum barrier due to enhancement of the hole transportation. (C) 2020 The Author(s)
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页数：2
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