Low dislocation density, broad area, high power CW operated InGaN laser diodes

被引：0

作者：

Perlin, P. ^{[1
]}

Wisniewski, P. ^{[1
]}

Czernecki, R. ^{[1
]}

Leszczynski, M. ^{[1
]}

Suski, T. ^{[1
]}

Grzegory, I. ^{[1
]}

Marona, L. ^{[1
]}

Swietlik, T. ^{[1
]}

Komorowska, K. ^{[1
]}

Porowski, S. ^{[1
]}

机构：

[1] Inst High Pressure Phys, Unipress Sokolowska 29-37, PL-01142 Warsaw, Poland

来源：

SEMICONDUCTOR LASERS AND LASER DYNAMICS II | 2006年 / 6184卷

关键词：

GaN; InGaN; laser diode; wide stripe; high power;

D O I：

10.1117/12.662912

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We fabricated wide-stripe laser diodes operating between 380 and 430 urn. The threshold current density for 380 and 430 nm devices (6-7 kA/cm(2)) was only slightly higher than for our main stream 415 nm devices (4-6 kA/cm2). Thanks to the use of high-pressure-grown low-dislocation-density substrates we succeeded in demonstration of high power optical emission both under CW and pulse operation. For the device emitting at 415 run we were able to demonstrate 200 mW of CW optical power (20 pm wide device) and 2.7 W under pulse current operation (peak power, 50 mu m device). The main obstacle for achieving CW operation of 50 pm device was to remove the excess of heat from laser chip-diamond submount assembly.

引用

页数：8

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