Nature of magnetism in III-V based diluted magnetic semiconductors

被引：0

作者：

Katsumoto, S ^{[1
]}

Hayashi, T ^{[1
]}

Hashimoto, Y ^{[1
]}

Iye, Y ^{[1
]}

Ishiwata, Y ^{[1
]}

Watanabe, M ^{[1
]}

Eguchi, R ^{[1
]}

Takeuchi, T ^{[1
]}

Harada, Y ^{[1
]}

Shin, S ^{[1
]}

Hirakawa, K ^{[1
]}

机构：

[1] Univ Tokyo, Inst Solid State Phys, Kashiwa, Chiba 2778581, Japan

来源：

PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS | 2001年 / 2卷

关键词：

diluted magnetic semiconductor; infrared conductivity; X-ray absorption spectroscopy;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A systematic study on magnetism and transport in III-V based diluted magnetic semiconductors (Ga,Mn)As and (In,Mn)As is presented. Low-temperature annealing effect is utilized to control material parameters. X-ray absorption spectroscopy revealed that Mn-ions that contribute to the ferromagnetisin are in d(5) states, hence the holes should mainly be in As 4p states. On the other hand, infrared optical conductivity measurements indicate those holes are almost localized. These results naturally provide a picture for the ferromagnetism in these materials. The low-temperature annealing is also applied to detailed study of the metal-insulator transition.

引用

页码：261 / 264

页数：4

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