NEW DILUTED MAGNETIC SEMICONDUCTORS BASED ON III-V COMPOUNDS

被引：53
|
作者：
VONMOLNAR, S
MUNEKATA, H
OHNO, H
CHANG, LL
机构：
[1] IBM Research Division, T.J. Watson Research Center, Yorktown Heights, NY 10598
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1991年 / 93卷
关键词：
D O I：
10.1016/0304-8853(91)90361-D
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper focuses on the homogeneity of Mn ions in the new diluted magnetic semiconductor (DMS) In1-xMnxAs. It is demonstrated that, when grown at 200-degrees-C substrate temperature, the In compound produces a homogeneous alloy. The most extensive proof of this lies in detailed magnetization measurements. Supportive evidence comes from X-ray (lattice constant), optical (bandgap) and transport measurements.
引用
收藏
页码：356 / 364
页数：9
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