Perpendicular coercive force of thick CoFeB thin films grown on silicon substrate

被引：17

作者：

Sun, B. ^{[1
]}

Li, G. Q. ^{[1
]}

Zhao, W. X. ^{[1
]}

Shen, Z. ^{[1
]}

Liu, Y. H. ^{[1
]}

Chen, P. ^{[1
]}

机构：

[1] Southwest Univ, Sch Phys Sci & Technol, Chongqing 400715, Peoples R China

来源：

MATERIALS LETTERS | 2014年 / 123卷

基金：

美国国家科学基金会;

关键词：

Thick CoFeB thin films; Perpendicular coercive force; Magnetic properties; Silicon substrate; MAGNETIC-ANISOTROPY; MAGNETOCRYSTALLINE ANISOTROPY; FE;

D O I：

10.1016/j.matlet.2014.02.099

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The room-temperature magnetic properties of CoFeB thin films grown on silicon substrate were investigated. Large perpendicular coercive forces in CoFeB thin films with thickness up to 172 nm were observed. The value of the perpendicular coercive force is 1850 Oe as the thickness of the CoFeB layer is 38 nm. The large perpendicular coercive force indicates the presence of intrinsic perpendicular magnetic anisotropy in thick CoFeB layer with thickness up to 172 nm, which originates from (300) texture in CoFeB layer. The strength of perpendicular magnetic anisotropy of CoFeB depends on annealing temperature. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：221 / 223

页数：3

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